Nanowires Grown by Beam Epitaxy

Nanowires Grown by Beam Epitaxy

Semiconductor nanowires (NWs) are attracting wide interest due to their unique physical properties and potential for application in nanodevices. NWs can be obtained by a number of growth methods, and their highly anisotropic growth originates by the presence of a metal particle, the catalyst, that determines the position and the diameter of the nanostructure. The most widely used catalyst is gold. The growth mechanism of catalyst assisted nanowires involves the incorporation of material both impinging on the catalyst particle and diffusing from the free substrate surface to the sidewalls of the wire. The interplay of these two phenomena is critical especially for the growth of alloy semiconductor compound NWs and one dimensional (1-D) heterostructure.

Ceramic Nano-particles

Ceramic Nano-particles

This seminar will introduce the basics of nanotechnology. Along with the fundamentals, it will overview current research trends and the underlying problems in nanotechnology. Focus will be on ceramic nano-particles, such as their synthesis routes (including thermal hydrolysis, hydrothermal processes and solid state reaction). Some applications of nano-ceramics will also be mentioned.